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| SMD Type TrenchPLUS standard level FET KUK7105-40ATE TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Integrated temperature sensor Electrostatic discharge protection Standard level compatible. +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 Q101 compliant + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V peak drain current *1 Total power dissipation Tmb = 25 gate-source clamping current (continuous) gate-source clamping current *3 FET to temperature sense diode isolation voltage Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 is; 40 V; VGS = 10 V; RGS = 50U;starting Tj = 25 Visol(FET-TSD) Tstg, Tj IDR IDRM EDS(AL)S Rth j-mb Rth j-a Symbol VDS VDGS VGS ID ID IDM Ptot IGS(CL) Rating 40 40 20 155 75 620 272 10 50 100 -55 to 175 155 75 620 1.46 0.55 50 A A A J K/W K/W Unit V V V A A A W mA mA V *2 unclamped inductive load; ID = 75 A;VDS *3 tp = 5 ms; = 0.01 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KUK7105-40ATE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate-source threshold voltage VGS(th) ID = 1 mA; VDS = VGS;Tj = 175 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current gate-source breakdown voltage gate-source leakage current IDSS VDS = 40 V; VGS = 0 V;Tj = 25 VDS = 40 V; VGS = 0 V;Tj = 175 V(BR)GSS IG = IGSS VGS = VGS = drain-source on-state resistance forward voltage, temperature sense diode temperature coefficient temperature sense diode temperature sense diode forward voltage hysteresis total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage reverse recovery time recovered charge RDSon VF SF Vhys Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls VSD trr Qr measured from upper edge of drain mounting base to center of die measured from source lead to source bond pad Is = 25A; VGS = 0 V IS = 20 A; dIF/dt = -100 A/is; VGS = -10 V; VDS = 30 V VDD = 30 V; RL = 1.2U;VGS = 10 V; RG = 10U VGS = 0 V; VDS = 25 V;f = 1 MHz VGS = 10 V; VDD = 32 V;ID = 25 A 1 mA;-55 Tj 175 20 Transistors IC Min 40 36 2 1 Typ Max Unit V V 3 4 V V 4.4 0.1 10 250 22 22 1000 10 . 4.5 5 9.5 648 658 668 V A A V nA A m m mV 10 V; VDS = 0 V;Tj = 25 10 V; VDS = 0 V;Tj = 175 VGS = 10 V; ID = 50 A;Tj = 25 VGS = 10 V; ID = 50 A;Tj = 175 IF = 250 iA IF = 250 iA;-55 125 iA IF Tj 175 -1.4 25 -1.54 -1.68 mV/K 32 118 16 57 4500 1500 960 35 115 155 110 2.5 7.5 0.85 96 224 1.2 50 mV nC nC nC pF pF pF ns ns ns ns nH nH V ns nC 250 iA 2 www.kexin.com.cn |
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